SiGen extends NanoTec’s application of an industry-proven set of process technologies, tools and know-how to 3DIC, including the NANOCLEAVE(TM) layer transfer process
FREMONT, Calif., March 2, 2023 /EINPresswire.com/ — Silicon Genesis Corporation (SiGen) has developed the industry standard NANOCLEAVE(TM) layer transfer process for three-dimensional integrated circuits (3DIC). By stacking CMOS device layers less than 2 um thick into atomically bonded heterogeneous circuit elements, the overall system bandwidth and performance can be improved in applications such as stacked CMOS image sensors, logic, memory and MEMS applications. Enhanced.
With the end of a 50-year cycle of systematic IC performance improvement through Dennard scaling of vertical and horizontal device dimensions, improvements in electronic system performance are now driven by vertically oriented IC chip and sensor combinations. Stacking wafer-scale IC devices into a 3DIC system greatly reduces the length of the data path between logic and memory functions, greatly increasing interconnect density and surpassing the capabilities of current 2.5 and 3D packaging methods. achieve performance levels well in excess of
SiGen works closely with customers by working on application-specific products using a Customer Specific Substrate (CSS) development approach. CSS is one of the most effective approaches in SiGen’s NanoTec toolkit. Through years of joint experience with CSS procedures, SiGen and its customers are able to arrive at optimal layer transfer solutions with much shorter development times.
CSS procedures help SiGen and its customers adapt device designs and layer transfer processes to each other to optimize performance for specific applications. This includes addressing issues such as controlling device surface flatness and roughness to obtain strong wafer-to-wafer bonding, and device bowing, warping, which occurs when transferring thin device layers to planar handles. , to address various other issues, such as changes in stress. wafer.
SiGen NanoTec layer transfer tools and processes are built on two key process requirements. (1) strong atomic layer bonding of semiconductor wafers using SiGen plasma activation technology and (2) efficient room temperature cutting of layers using a unique room temperature controlled cutting process. (rT-CCP) various techniques initiate cutting and separation of layers of material at room temperature. This layer transfer process, called NANOCLEAVE(TM), has been known as his SiGen industry standard for the production of SOI and SOQ wafers for over 20 years.
Extensions to 3DIC of the NANOCLEAVE(TM) Layer Transfer Process include: (1) embedded cooling channels between device layers; Accompanied by a patent. Shorter distance between active circuit layers than the standard redistribution layer (RDL) used in today’s 2.5D packages, (3) reducing damage on sensitive dielectric layers, and (5) metal (6) integration of wafer and die-scale IC devices into heterogeneous 3DIC systems;
SiGen has been actively developing 3DIC process technology for over seven years, including several applications for CMOS Image Sensors (CIS). This promising development has the potential to introduce his cutting-edge CIS products, which are a generation or two ahead of the competition currently on the market.
Focused on enabling large-scale implementation of layer transfer methods for 3DIC, SiGen’s business activities include active support of customer development, licensing of technology for transfer to mass production, and It involves selling the tools that make the process possible.
SiGen is a leading provider of substrate processing technology and equipment designed for the semiconductor, display, and optoelectronics markets. SiGen’s technology is used in the production of silicon-on-insulator (SOI) semiconductor wafers and his 3DIC stack of CMOS device layers for high-performance applications. SiGen develops innovative substrates through thin and thick film engineering to provide customers with new applications and markets. SiGen’s customers and partners include the top players in substrate, device and equipment suppliers worldwide. Founded in 1997, his SiGen is headquartered in Fremont, California. For more information, visit www.sigen.com to see SiGen NanoTec’s complete line of layer transfer processes, equipment technology and services.
Silicon Genesis Corporation